? 0.15) is epitaxially developed over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, then the construction is cycled by oxidizing and annealing stages. A result of the preferential oxidation of Si more than Ge [68], the initial Si1–Nghiên c?u c?a FDA ??a ra k?t lu?n r?ng germani, khi s? ??ng nh? là ch?t b? sung dinh d??ng,